11.3 Improved GaAs HBT Device Linearity with Flattened Cutoff Frequency Curve
نویسندگان
چکیده
Modern communications require high linearity for power amplifiers. GaAs heterojunction bipolar transistor (HBT) based amplifiers are proven to have high efficiency, good linearity, ruggedness, and low cost. In this paper we report on an improved linearity GaAs HBT device achieved through a novel engineered Ft curve. The novelty of the solution relies on the flatness of the Ft curve with device current density.
منابع مشابه
The new two-dimensional electron gas base HBT (2DEG-HBT): two-dimensional numerical simulation - Electron Devices, IEEE Transactions on
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